Display device and manufacturing method of display device

ABSTRACT

A display device 1 of the present invention includes a first conductive layer 20 and a second conductive layer 21 arranged across an insulating layer 24 from the first conductive layer 20. An overlap section 40 at which the first conductive layer 20 and the second conductive layer 21 overlap each other is provided. At least one of the first conductive layer 20 and the second conductive layer 21 includes a slit portion 210 a  that is arranged in the overlap section 40. The width of the slit portion 210 a  is set to be smaller at a medial area 82 except both end areas 81 of the slit portion 210 a , than at the both end areas 81.

TECHNICAL FIELD

The present invention relates to a display device and a manufacturing method of a display device.

BACKGROUND ART

A display device, such as a liquid crystal display device, an EL display device or a plasma display device, is conventionally known, in which pixel electrodes are arranged in a matrix on a transparent substrate. A voltage is applied individually to each pixel electrode in order to form an image. An active matrix driving method is known as a driving method for the display device. In the active matrix display device, gate bus lines (or scanning lines) and source bus lines (or signal lines) are arranged in a grid pattern on the transparent substrate, while switching elements such as TFTs are provided in the vicinities of the respective intersections of the gate bus lines and the source bus lines.

Each TFT includes a gate electrode branching from the gate bus line, a source electrode branching from the source bus line, and a drain electrode connected to the pixel electrode, for example. Further, a transparent substrate that includes a counter electrode is provided so as to face the transparent substrate that includes the pixel electrodes. Each pixel is driven by a voltage that is applied between the pixel electrode and the counter electrode based on a signal from the source bus line, when a selection signal is received from the gate bus line.

In the display device, when a leak has occurred between intersecting wiring lines such as a source bus line and a gate bus line, a signal cannot be transmitted properly beyond the short-circuited portion of the source bus line. This will cause a linear area that includes defective display (i.e., line defect). The techniques described in Patent Documents 1 and 2 are known as methods for fixing a defect at the intersection between wiring lines, for example.

Patent Document 1: JP-A-H7-28076 Patent Document 2: JP-A-2004-347891 Problem to be Solved by the Invention

Patent Document 1 discloses a technique that provides a large hole region on each overlapping portion of a wiring line, so that a short-circuited portion can be isolated by forming cut parts extending from the respective ends of the hole region by use of energy beam irradiation. Patent Document 2 discloses a technique that provides a plurality of parallel slits on each overlapping portion of a wiring line, so that the wiring line can be cut off at the slit-formed area.

According to the construction, laser cut of a conductive layer beyond the slit-formed area is required to isolate a leak spot that includes a film residue or a foreign substance larger than the slit width. In this case, the turning angle of laser cutting when the laser turns in direction may be limited to 90 degrees. If not limited, a 90-degree turn is preferable for facilitating the operation. When the conductive layer is thus cut out, the cutting may fail to eliminate a leak completely, due to some reason such as flying cut pieces. Particularly, the area corresponding to a turning point of the laser is prone to a defect of repair. Therefore, the turning point of the laser should be set to a point within intangible portions of the conductive layer, if feasible. That is, it is preferable to set the turning point of the laser to a point within the slits.

When described in relation to the slit width, the corner (corresponding to a turning point of the laser) is particularly prone to being left unfinished, if the slit width is set to be small. In this case, the cutting may fail to be reliably achieved, and therefore may result in a defect of repair. On the other hand, if the slit width is set to be considerably large for preventing a defect of repair, the wiring resistance may be inevitably high, resulting in degradation of display performance.

DISCLOSURE OF THE INVENTION

The present invention was made in view of the foregoing circumstances, and an object thereof is to provide a display device in which a leak spot or the like on a conductive layer (or on a wiring part) can be suitably fixed, without increasing the resistance, and further to provide a manufacturing method of the display device.

Means for Solving the Problem

In order to solve the above problem, a display device according to the present invention includes a first conductive layer, and a second conductive layer arranged across an insulating layer from the first conductive layer. An overlap section at which the first conductive layer and the second conductive layer overlap each other is provided. At least one of the first conductive layer and the second conductive layer includes a slit portion that is arranged in the overlap section. The width of the slit portion is set to be smaller at a medial area except both end areas of the slit portion, than at the both end areas.

According to the present display device, when a fault such as a leak is generated in the overlap section at which the first conductive layer and the second conductive layer overlap each other, the area of the fault can be separated off without leaving an unfinished cut portion, by cutting off a portion of the conductive layer, starting at an end area of the slit portion provided as a wider area than the medial area. Thereby, a highly reliable conductive feature can be provided, which enables provision of a high-quality display device.

On the other hand, the slit width is set to be smaller at the medial area of the slit portion, than at the both end areas of the slit portion. According to the construction, increase of the resistance of the conductive layer can be suppressed, compared to simply providing a slit portion of constant width equal to the width of the both end areas. Consequently, degradation of display performance may be prevented. Any size of defective area (or any size of foreign substance) can be separated off by cutting off a portion of the conductive layer, starting at an end area of the slit portion. That is, the starting point can be set to a point within areas of the slit portion except the medial area, when a portion of the conductive layer is cut off. Therefore, the medial area is immune to cutting operation. In view of this, the slit width is set to be smaller at the medial area of the slit portion, than at the both end areas, so that increase of the resistance of the conductive layer can be suppressed.

Note that the overlap section of the present invention also includes the periphery of a section at which the conductive layers overlap each other. Specifically, areas of the overlapping conductive layers in which a leak may occur due to intrusion of a foreign substance are included. A crossover section at which the conductive layers intersect each other can be an operative example of the overlap section.

The both end areas of the slit portion can be formed to have a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm, and the medial area can be formed to have a slit width between 4.0 μm and 6.0 μm.

The present construction enables improvement in precision of a cutting operation at the end areas, in the case of laser cutting. That is, when the both end areas thus have a rectangular shape with 6.0 μm to 10.0 μm sides, the cutting can be optimally achieved while preventing a defect of repair, because the laser beam width is several micrometers. If each side of the both end areas is set to be less than 6.0 μm, the scanning laser may need to turn at a tangible portion of the conductive layer. Further, an unfinished laser-cut portion may be left at the end areas, resulting in failure to obtain a reliable cutting result. On the other hand, if each side of the both end areas is set to exceed 10.0 μm, the resistance of the conductive layer may be unnecessarily increased.

Due to the medial area of the slit portion having a smaller slit width, i.e., a width between 4.0 μm and 6.0 μm, increase of the resistance of the conductive layer can be suppressed. If the width of the medial area is set to be less than 4.0 μm, a leak spot may fail to be reliably cut off. If the width is set to exceed 6.0 μm, the resistance of the conductive layer may be unnecessarily increased.

According to the present invention, at least one of the first conductive layer and the second conductive layer, on which the slit portion is provided, may include a cutout portion located, at a predetermined distance from the slit portion.

According to the construction, a defective area can be separated off by cutting off a portion of the conductive layer connecting the slit portion and the cutout portion. Thereby, a defect over a relatively large area can be repaired. Compared to simply increasing the length of the slit portion in order to enable repair of a larger defective area, increase of the resistance of the conductive layer can be suppressed, which may prevent degradation of display performance.

The above slit portion may include a plurality of slit portions arranged parallel to one another, and the above cutout portion may include cutout portions arranged to correspond to the respective slit portions.

The present construction enables repair of variously-sized defective areas, and therefore a defect over a relatively large area can be repaired. When a defect across a plurality of slit portions has occurred, for example, the portions of the conductive layer connecting the plurality of slit portions can be cut off. Further, due to the cutout portion provided at a predetermined distance from each slit portion, a defect over a large area extending thereto can be treated by cutting off a portion of the conductive layer connecting the slit portion and the cutout portion. Due to the parallel arrangement of the slit portions and further due to the cutout portions corresponding to the parallel slit portions, the cutting operation can be advanced in the longitudinal direction of the slit portions, or in a direction (i.e., the array direction of the slit portions) intersecting with the longitudinal direction. Thus, the cutting operation is facilitated.

The cutout portion can be formed to be linearly aligned with the silt portion.

According to the construction, in the case that the cutting operation is achieved by using laser radiation, the laser scanning can be advanced in either of the vertical and horizontal directions which intersect each other at an angle of 90 degrees. Thus, the laser scanning is facilitated, and consequently the precision of irradiation can be improved. Specifically, a portion of the conductive layer connecting the slit portion and the cutout portion can be cut off along the longitudinal direction of the silt portion. A portion of the conductive layer connecting the parallel slit portions, or a portion of the conductive layer connecting the cutout portions arranged in a line can be cut off along the array direction of the slit portions.

The above cutout portion may include a plurality of cutout portions arranged along the longitudinal direction of the slit portion.

The present construction enables repair of a further larger defective area while suppressing increase of the resistance of the conductive layer.

The above cutout portion may include cutout portions arranged in an array of rows and columns.

According to the construction, the cutting operation for cutting off a portion of the conductive layer connecting the cutout portions can be advanced in the vertical or horizontal direction while involving 90-degree turns. Thus, the cutting operation is facilitated. Particularly in the case that the cutting operation is achieved by using laser radiation, a turning point at which the scanning laser turns 90 degrees can be set to a point within any of the cutout portions arranged in an array of rows and columns (i.e., the turning point can be set to a point within intangible portions of the conductive layer). Consequently, a defect of repair likely generated at the turning point (e.g., at the turning point of the scanning laser) can be prevented.

The above cutout portion can be formed to have a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm.

The cutout portion thus constructed enables improvement in precision of a cutting operation in the case of laser cutting. That is, when the cutout portion thus has a rectangular shape with 6.0 μm to 10.0 μm sides, the cutting can be optimally achieved while preventing a defect of repair, because the laser beam width is several micrometers. If each side of the cutout portion is set to be less than 6.0 μm, the scanning laser may need to turn at a tangible portion of the conductive layer. Further, an unfinished laser-cut portion may be left at the cutout portion, resulting in failure to obtain a reliable cutting result. On the other hand, if each side of the cutout portion is set to exceed 10.0 μm, the resistance of the conductive layer may be unnecessarily increased.

In order to solve the above problem, the present invention provides a manufacturing method of a display device that includes a first conductive layer and a second conductive layer arranged across an insulating layer from the first conductive layer. The manufacturing method includes forming the first conductive layer by a first conductive layer forming process, forming the insulting layer on the first conductive layer, and forming the second conductive layer on the insulating layer by a second conductive layer forming process so that an overlap section at which the second conductive layer overlaps with the first conductive layer is provided. Further included is fixing a fault by a repair process when the fault is generated in the overlap section. At least one of the first conductive layer forming process and the second conductive layer forming process includes forming a slit portion on at least one of the first conductive layer and the second conductive layer by a slit farming process, by which the slit portion is formed in the overlap section so as to have a smaller slit width at a medial area except both end areas of the slit portion, than at the both end areas. The repair process includes cutting off an area of the fault by radiating a laser beam to a conductive layer portion adjacent to an end area of the slit portion provided as a relatively wide area thereof, starting at the end area.

According to the present manufacturing method, the area of the fault can be suitably fixed. Thereby, a highly reliable conductive feature can be provided, which enables provision of a high-quality display device. Specifically, the area of the fault can be separated off without leaving an unfinished cut portion, by cutting off a portion of the conductive layer, starting at an end area of the slit portion provided as a relatively wide area thereof. Compared to simply providing a slit portion of constant width equal to the width of the both end areas, increase of the resistance of the conductive layer can be suppressed, due to the medial area having a smaller slit width than that of the both end areas. Consequently, degradation of display performance may be prevented.

The both end areas can be formed by the slit forming process into a rectangular shape on which each side thereof is set to a length equal to a value obtained by adding a value between 2.0 μm and 4.0 μm to a width of the laser beam.

The present construction enables improvement in precision of a cutting operation at the end areas, in the case of laser cutting. That is, the cutting can be optimally achieved while preventing a defect of repair, when the both end areas have a rectangular shape on which each side thereof is set to a length equal to a value obtained by adding a value between 2.0 μm and 4.0 μm to the laser beam with. If each side of the both end areas is set to a length equal to a value obtained by adding a value less than 2.0 μm to the laser beam with, the scanning laser may need to turn at a tangible portion of the conductive layer. Further, an unfinished laser-cut portion may be left at the end areas, resulting in failure to obtain a reliable cutting result. On the other hand, if each side is set to a length equal to a value obtained by adding a value exceeding 4.0 μm to the laser beam width, the resistance of the conductive layer may be unnecessarily increased.

The both end areas can be formed by the slit forming process into a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm, and the medial area can be formed by the slit forming process so as to have a slit width between 4.0 μm and 6.0 μm.

The present construction enables improvement in precision of a cutting operation at the end areas, in the case of laser cutting. That is, when the both end areas thus have a rectangular shape with 6.0 μm to 10.0 μm sides, the cutting can be optimally achieved while preventing a defect of repair, because the laser beam width is several micrometers. If each side of the both end areas is set to be less than 6.0 μm, the scanning laser may need to turn at a tangible portion of the conductive layer. Further, an unfinished laser-cut portion may be left at the end areas, resulting in failure to obtain a reliable cutting result. On the other hand, if each side of the both end areas is set to exceed 10.0 μm, the resistance of the conductive layer may be unnecessarily increased.

Due to the medial area of the slit portion having a smaller slit width, i.e., a width between 4.0 μm and 6.0 μm, increase of the resistance of the conductive layer can be suppressed. If the width of the medial area is set to be less than 4.0 μm, a defective area may fail to be reliably cut off. If the width is set to exceed 6.0 μm, the resistance of the conductive layer may be unnecessarily increased.

At least one of the first conductive layer forming process and the second conductive layer forming process may include forming a cutout portion located at a predetermined distance from the slit portion, by a cutout forming process.

In this case, a defective area can be separated off by cutting off a portion of the conductive layer connecting the slit portion and the cutout portion. Thereby, a defect over a relatively large area can be repaired. Compared to simply increasing the length of the slit portion in order to enable repair of a larger defective area, increase of the resistance of the conductive layer can be suppressed, which may prevent degradation of display performance.

The slit forming process can include forming a plurality of slit portions as the above slit portion, which are arranged parallel to one another. The cutout forming process can include forming cutout portions as the above cutout portion, which are arranged to correspond to the plurality of slit portions.

In this case, repairs of variously-sized defective areas may be possible, and therefore a defect over a relatively large area can be repaired. When a defect across a plurality of slit portions has occurred, for example, the portions of the conductive layer connecting the plurality of slit portions can be cut off. Further, due to the cutout portion provided at a predetermined distance from each slit portion, a defect over a large area extending thereto can be treated by cutting off a portion of the conductive layer connecting the slit portion and the cutout portion.

Due to the parallel arrangement of the slit portions and further due to the cutout portions corresponding to the parallel slit portions, the cutting operation can be advanced in the longitudinal direction of the slit portions, or in a direction (i.e., the array direction of the slit portions) intersecting with the longitudinal direction. Thus, the cutting operation is facilitated. In the case that the cutting operation is achieved by using laser radiation, the laser scanning can be advanced in either of the vertical and horizontal directions which intersect each other at an angle of 90 degrees. Thus, the laser scanning is facilitated, and consequently the precision of irradiation can be improved. Specifically, a portion of the conductive layer connecting the slit portion and the cutout portion can be cut off along the longitudinal direction of the silt portion. A portion of the conductive layer connecting the parallel slit portions, or a portion of the conductive layer connecting the cutout portions arranged in a line can be cut off along the array direction of the slit portions.

The cutout forming process can include forming a plurality of cutout portions, which are arranged along the longitudinal direction of the slit portion.

In this case, repair of a further larger defective area may be possible, while increase of the resistance of the conductive layer is suppressed.

The cutout forming process may include forming cutout portions as the above cutout portion, which are arranged in an array of rows and columns.

In this case, the cutting operation for cutting off a portion of the conductive layer connecting the cutout portions can be advanced in the vertical or horizontal direction while involving 90-degree turns. Thus, the cutting operation is facilitated. Particularly in the case that the cutting operation is achieved by using laser radiation, a turning point at which the scanning laser turns 90 degrees can be set to a point within any of the cutout portions arranged in an array of rows and columns (i.e., the turning point can be set to a point within intangible portions of the conductive layer). Consequently, a defect of repair likely generated at the turning point (e.g., at the turning point of the scanning laser) can be prevented.

The cutout portion can be formed by the cutout forming process into a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm.

In this case, the precision of cutting operation can be improved. That is, when the cutout portion thus has a rectangular shape with 6.0 μm to 10.0 μm sides, the cutting can be optimally achieved while preventing a defect of repair, because the laser beam width is several micrometers. If each side of the cutout portion is set to be less than 6.0 μm, the scanning laser may need to turn at a tangible portion of the conductive layer. Further, an unfinished laser-cut portion may be left at the cutout portion, resulting in failure to obtain a reliable cutting result. On the other hand, if each side of the cutout portion is set to exceed 10.0 μm, the resistance of the conductive layer may be unnecessarily increased.

EFFECT OF THE INVENTION

The present invention can provide a display device in which a leak spot or the like on a conductive layer (or on a wiring part) can be suitably fixed, without increasing the wiring resistance.

Further, the present invention can provide a manufacturing method of the display device that includes a process by which a leak spot or the like on a conductive layer (or on a wiring part) can be suitably fixed, without increasing the resistance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically showing the driver circuits and the wiring configuration of a liquid crystal display device according to an embodiment 1 of the present invention;

FIG. 2 is a partially-enlarged schematic plan view of FIG. 1;

FIG. 3 is a partially-enlarged schematic plan view of FIG. 2;

FIG. 4 is a schematic sectional view of FIG. 3 along the line A-A;

FIG. 5 is a schematic sectional view of FIG. 3 along the line B-B;

FIG. 6 is an explanatory diagram showing the operational effects of the liquid crystal display device according to the embodiment 1;

FIG. 7 is a schematic plan view showing the configuration of pixels of the liquid crystal display device according to the embodiment 1;

FIG. 8 is a diagram schematically showing the sectional configuration of the liquid crystal display device according to the embodiment 1;

FIG. 9 is an explanatory diagram showing the operational effects of the end areas of slit portions having an adequate width according to the embodiment 1;

FIG. 10 is an explanatory diagram showing the problem of the end areas of slit portions having a constant width according to related art;

FIG. 11 is a partially-enlarged schematic plan view of a liquid crystal display device according to an embodiment 2 of the present invention;

FIG. 12 is an explanatory diagram showing the operational effects of the liquid crystal display device according to the embodiment 2;

FIG. 13 is a diagram schematically showing a modification of cutout portions;

FIG. 14 is a diagram schematically showing another modification of the cutout portions;

FIG. 15 is a diagram schematically showing another modification of the cutout portions;

FIG. 16 is a diagram schematically showing another modification of the slit portions or the cutout portions;

FIG. 17 is a diagram schematically showing another modification of the slit portions; and

FIG. 18 is a diagram schematically showing another modification of the slit portions and the cutout portions.

EXPLANATION OF SYMBOLS

-   -   1: Liquid crystal display device (Display device), 20: Storage         capacitor line (First conductive layer), 21, 51: Peripheral         wiring line (Second conductive layer), 21 a, 51 a: Conductive         layer, 24: Gate insulator (Insulating layer), 40: Crossover         section (Overlap section), 81, 83: End area (Both end areas),         82, 84: Medial area, 210 a, 510 a, 710 a: Slit portion, 510 b,         710 b; Cutout portion.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1

An embodiment 1 of the present invention will be hereinafter explained with reference to FIGS. 1 to 10. Specifically, a liquid crystal display device will be described as an embodiment of a display device.

FIG. 1 is a plan view schematically showing the driver circuits and the wiring configuration of the liquid crystal display device according to the present embodiment. FIG. 7 is a schematic plan view showing the configuration of pixels of the liquid crystal display device. FIG. 8 is a diagram schematically showing the sectional configuration of the liquid crystal display device.

In the liquid crystal display device 1 of the present embodiment, a liquid crystal layer 4 is sandwiched between a pair of substrates 2, 3 so as to fill the rectangular area formed on the inner side of a sealant 7.

The substrate 2 is provided as an element substrate, which includes TFTs 16 as switching elements (See FIG. 7), and further includes pixel electrodes 17 arranged in a matrix and connected to the respective TFTs 16.

On the other hand, the substrate 3 is provided as an opposite substrate, which includes a common electrode 6 arranged solidly on the substrate surface.

Further, a plurality of data lines 18 for supplying an image signal from a source driver 8 to each pixel, a plurality of scanning lines 19 for supplying a scan signal from a gate driver 9 to the TFT 16 of each pixel, and storage capacitor lines 20 for supplying an electrical signal from the source driver 8 for the capacitance of each pixel are provided on the element substrate 2. The storage capacitor lines 20 are connected, via contact holes (described below), to peripheral wiring lines 21 connected to the source driver 8.

In each pixel section, as shown in FIG. 7, the pixel electrode 17 and the storage capacitor line 20 are connected in parallel. When the TFT 16 is turned ON, an image signal (or a drive voltage) is written into the pixel section. The voltage is held on the storage capacitor even after the TFT 16 turns OFF, due to the storage capacitor line 20 arranged in the pixel section. The storage capacitors are formed of a gate insulator (described below) that is arranged between the storage capacitor lines 20 and the pixel electrodes 17.

FIG. 2 is a schematic plan view that magnifies the area bounded by a dashed line in FIG. 1. FIG. 3 is a partially-enlarged plan view of FIG. 2. FIG. 4 is a sectional view of FIG. 3 along the line A-A. FIG. 5 is a sectional view of FIG. 3 along the line B-B.

The peripheral wiring lines 21 (i.e., a second conductive layer) are connected to the storage capacitor lines 20 (i.e., a first conductive layer) via contact holes 22, so as to be capable of providing an electrical signal from the source driver 8 (See FIG. 1) to the storage capacitor lines 20. The peripheral wiring lines 21 are formed of a wiring layer (or a conductive layer) that is formed by the same process as for the data lines 18. That is, the peripheral wiring lines 21 are formed of the same layer and the same material as the data lines 18. On the other hand, the storage capacitor lines 20 are formed of a wiring layer that is formed by the same process as for the scanning lines 19. That is, the storage capacitor lines 20 are formed of the same layer and the same material as the scanning lines 19. Consequently, the peripheral wiring lines 21 and the storage capacitor lines 20 are arranged in layers so as to form a lamination stack together with the gate insulator 24 arranged therebetween.

Referring to FIGS. 2 to 5, the peripheral wiring lines 21 and the storage capacitor lines 20 are arranged to intersect each other. In each crossover section 40 (or overlap section), fault repair slit portions 210 a, 211 a, 212 a and the like (hereinafter sometimes collectively referred to as “slit portions 210 a and the like”) are provided, which are used for fixing a fault such as short circuit when the fault has occurred. The slit portions 210 a and the like are formed on the peripheral wiring line 21.

The slit portions 210 a and the like are formed of a plurality of parallel slits arranged evenly spaced apart. The slit length is set to a value between 35.0 μm and 50.0 μm (e.g., 40.0 μm). On the slit portions 210 a and the like, the slit width is set to be smaller at the medial area 82 of each slit portion, i.e., at areas except both end areas 81 of each slit portion 210 a or the like, than at the both end areas 81. Specifically, the both end areas 81 of the slit portions 210 a and the like are individually formed into a rectangular shape, or specifically, into a square shape, on which each side thereof is set to a length between 6.0 μm and 10.0 μm (e.g., 8.0 μm). On the other hand, the slit width is set to a value between 4.0 μm and 6.0 μm (e.g., 4.0 μm) at the medial area 82 or at areas except the both end areas 81. The distance between adjacent slit portions (i.e., slit-to-slit distance, or pitch) is set to a value between 30.0 μm and 50.0 μm (e.g., 45.0 μm). The scanning lines 19 and the storage capacitor lines 20 can be formed of a conductive material having a Ti/Al/Ti structure, for example. The data lines 18 and the peripheral wiring lines 21 can be formed of a conductive material having a Ti/Al structure, for example. The gate insulator 24 arranged between the storage capacitor lines 20 and the peripheral wiring lines 21 can be formed of silicon oxide, or alternatively, can be formed of a laminated film, such as a laminated film of silicon oxide and a semiconductive material, a laminated film of silicon oxide, a semiconductive material and SOG (Spin On Glass), or a laminated film of silicon oxide and SOG (Spin On Glass). As shown in FIGS. 4 and 5, a passivation film 25 formed of silicon oxide and the like is provided on the peripheral wiring lines 21.

In the liquid crystal display device thus constructed, referring to FIG. 6, when a foreign substance 30 slips into a crossover section 40 at which a storage capacitor line 20 and a peripheral wiring line 21 intersect each other, for example, a fault such as a leak between the lines can be suitably fixed.

Specifically, the portions 21 a, 21 b of the conductive layer (or the peripheral wiring line 21) between the end areas 81 of the slit portions 210 a, 211 a are cut off by laser radiation, so that the slit portion 210 a communicates with the slit portion 211 a due to the laser-cut portions (or laser-irradiated portions designated by Symbols 32 and 33) as shown in FIG. 6. Consequently, the defective part attributable to the foreign substance 30 is electrically isolated, and thereby a failure caused by a fault such as a leak can be fixed.

Thus, the defective part can be separated off by a simple method, i.e., by cutting off the portions 21 a, 21 b of the conductive layer between the end areas 81 of the slit portions 210 a, 211 a so that the slit portions 210 a, 211 a communicate with each other.

Further, on the slit portions 210 a and the like, the slit width is set to be larger at the end areas 81 of each slit portion 210 a, 211 a corresponding to the laser-irradiated portions, than at the medial area 82. Specifically, each end area 81 has a square shape on which each side thereof is set to a length of 8.0 μm. This construction enables improvement in precision of a cutting operation in the case of laser cutting. That is, the defective part can be cut off without leaving unfinished laser-cut portions. Consequently, a highly reliable conductive feature can be provided, which enables provision of a high-quality display device.

In contrast, the slit width is set to 4.0 μm at the medial area 82 of each slit portion 210 a, 211 a corresponding to the unirradiated portion. Thereby, the areas of slit portions can be reduced to be small, compared to simply providing slit portions of constant width equal to the width of the end areas 81. Consequently, increase of the resistance of the conductive layer can be suppressed, which may prevent degradation of display performance.

Thus, the present embodiment enables adequate repair of a leak spot or the like on a conductive layer (or on a wiring part) 20, 21 in the liquid crystal display device 1, without increasing the wiring resistance.

Next, a manufacturing method of the liquid crystal display device 1 will be explained.

The following explanation will mainly focus on a repair process of the manufacturing process.

First, a pair of substrates 2, 3 formed of light transmissive glass substrates should be prepared.

Then, scanning lines 19 and storage capacitor lines 20 are formed on the substrate 2, and a gate insulator 24 is formed on the lines. Further, data lines 18 and peripheral wiring lines 21 are formed on the gate insulator 24. Note that the storage capacitor lines 20 and the peripheral wiring lines 21 are formed to intersect each other out of the display area as shown in FIGS. 3 to 5.

In the process of forming the peripheral wiring lines 21, slit portions 210 a and the like arranged in a pattern shown in FIGS. 3 to 5 are formed by mask etching using a photolithographic method. TFTs 16 and pixel electrodes 17 are further formed on the substrate 2, and an alignment film (not shown) is formed on the pixel electrodes 17.

On the other hand, a color filter (not shown) is formed on the substrate 3, if required. Further, a common electrode 6 is formed, and an alignment film (not shown) is formed on the common electrode 6.

After the electrodes and the like are thus formed on the substrates 2, 3, a sealant 7 is formed on at least one of the substrates 2, 3, and liquid crystal is dispensed into the inner region of the sealant 7. Then, the substrates 2, 3 are attached to each other via the sealant 7. A polarizing plate and the like are further placed, and then the manufacturing process of the liquid crystal display device 1 as in FIGS. 1 and 8 is completed.

In the manufacturing method of the present embodiment, if a foreign substance 30 shown in FIG. 6 slips into a crossover section 40 (See FIGS. 3 to 5) at which a storage capacitor line 20 and a peripheral wiring line 21 intersect each other, a repair process is performed for fixing a leak that may occur between the storage capacitor line 20 and the peripheral wiring line 21. In the repair process, some portions of the peripheral wiring line 21 connecting the adjacent slit portions 210 a and the like are cut off by laser for repairing purpose.

Specifically, the portions 21 a, 21 b of the conductive layer (or the peripheral wiring line 21) between the end areas 81 of the slit portions 210 a, 211 a are cut off by laser radiation, so that the slit portion 210 a communicates with the slit portion 211 a due to the laser-cut portions (or laser-irradiated portions 32 and 33) as shown in FIG. 6. Consequently, the defective area attributable to intrusion of the foreign substance 30 is electrically isolated, and thereby a failure caused by a fault such as a leak can be fixed. In the present embodiment, the laser beam width is set to 4.0 μm during the repair process.

The manufacturing method of the present embodiment thus including the repair process enables provision of a highly reliable liquid crystal display device. This is due to the slit portions 210 a and the like provided in each crossover section 40 at which the wiring lines 20, 21 intersect each other. Thereby, a defective area can be fixed by a simple method, i.e., by cutting off some portions of the conductive layer between the slit portions.

Further, on the slit portions 210 a and the like, the slit width is set to be larger at the end areas 81 of each slit portion 210 a, 211 a corresponding to the laser-irradiated portions, than at the medial area 82. Specifically, each end area 81 is formed into a rectangular shape, on which each side thereof is set to a length equal to a value obtained by adding a value between 2.0 μm and 4.0 μm to the width (e.g., 4.0 μm in the present embodiment) of the laser beam, (or more specifically, it is formed into an 8.0 μm-square shape). This construction enables improvement in precision of a cutting operation in the case of laser cutting. That is, a defective part can be fixed without leaving unfinished laser-cut portions.

How the cutting precision is associated with the width of the end areas 81 of the slit portions 210 a and the like will be explained in detail with reference to FIGS. 9 and 10. In the case that the end areas 81 of the slit portions 210 a and 211 a are individually formed into a rectangular shape on which each side thereof is set to a length equal to a value obtained by adding a value between 2.0 μm and 4.0 μm to the laser beam width, (or specifically, each end area is formed into an 8.0 μm-square shape as in the present embodiment, when the beam width is set to 4.0 μm), laser radiation can be applied for cutting so that the end areas 81 of the slit portions 210 a, 211 a communicate each other (See FIG. 9), and consequently the slit portions 210 a, 211 a can be reliably connected to each other due to laser-cut portions 34, shown by dashed-two dotted lines, without leaving unfinished laser-cut portions. Thus, the area bounded by the slit portions 210 a, 211 a and the laser-cut portions 34, 35 is electrically isolated, and thereby a failure caused by a fault such as a leak can be fixed.

In contrast, referring to FIG. 10, in the case that the end areas of the slit portions 910 a and 911 a have sides having a length (e.g., 4.0 μm) less than a value obtained by adding 2.0 μm to the laser beam width, (e.g., a length less than 6.0 μm when the beam width is set to 4.0 μm), an unfinished laser-cut portion 90 may be left to form a bridge across an end area of the slit portion 910 a as a result of applying laser radiation to the end area. In this case, the area bounded by the slit portions 910 a, 911 a and laser-cut portions 91, 92 can be conductive due to the unfinished laser-cut portion 90. That is, the area may fail to be electrically isolated, resulting in a defect of repair. For this reason, the end areas 81 of the slit portions 210 a and the like corresponding to laser-irradiated portions should be formed to have a width equal to or larger than a predetermined value.

The laser beam width is typically set to a value between 2.0 μm and 8.0 μm during the repair process. In view of this, it is preferable that the end areas 81 of the slit portions 210 a and the like corresponding to laser-irradiated portions have sides having a length between 6.0 μm and 10.0 μm.

On the other hand, the medial area 82 of each slit portion 210 a, 211 a, which is immune to laser irradiation during the repair process, is formed to have a smaller width (e.g., 4.0 μm in the present embodiment). Thereby, the areas of slit portions can be reduced to be small, compared to simply providing slit portions of constant width equal to the width of the end areas 81. Consequently, increase of the resistance of the conductive layer can be suppressed. Note that the present embodiment includes an inspection process for checking for the presence of a foreign substance 30 or the like prior to the repair process.

Embodiment 2

An embodiment 2 of the present invention will be explained with reference to FIGS. 11 and 12. The difference from the above embodiment 1 is that cutout portions are provided at a predetermined distance from respective slit portions. The other constructions are similar to the above embodiment. Therefore, the same parts as the above embodiment are designated by the same symbols, and redundant explanations are omitted.

FIG. 11 is a partially-enlarged plan view of a liquid crystal display device according to the present embodiment. FIG. 12 is an explanatory diagram showing the operational effects of the liquid crystal display device according to the present embodiment.

Referring to FIG. 11, in each crossover section 40 (or overlap section) at which a storage capacitor line (or first conductive layer) 20 and a peripheral wiring line (or second conductive layer) 51 intersect each other, fault repair slit portions 510 a, 511 a, 512 a and the like (hereinafter sometimes collectively referred to as “slit portions 510 a and the like”) are provided, which are used for fixing a fault such as short circuit when the fault has occurred. The slit portions 510 a and the like are formed on the peripheral wiring line 51. Further, in each crossover section 40, cutout portions Slob, 510 c, 510 d, 510 e, 511 b, 511 c, 511 d, 511 e, 512 b, 512 c, 512 d, 512 e and the like (hereinafter sometimes collectively referred to as “cutout portions 510 b and the like”) are provided, which are arranged at a predetermined distance from the respective slit portions 510 a, 511 a, 512 a and the like and along the longitudinal direction of the slit portions 510 a, 511 a, 512 a and the like. The cutout portions 510 b and the like are also provided as fault repair cutout portions used for fixing a fault, and are formed on the peripheral wiring line 51.

The slit portions 510 a and the like have similar shapes to those of the embodiment 1, and are arranged in a similar manner to the embodiment 1. On the other hand, the cutout portions 510 b and the like are arranged to be symmetrical with respect to the respective parallel slit portions 510 a, 511 a, 512 a and the like, so that a plurality of cutout portions (e.g., a total of four cutout portions, two on the right side and two on the left side, in the present embodiment) are aligned along the longitudinal direction of each slit portion 510 a, 511 a, 512 a or the like. That is, the cutout portions 510 b and the like are scattered so as to form an array of rows and columns. Each cutout portion is formed into a rectangular shape, or more specifically, into a square shape, and each side thereof is set to a length between 6.0 μm and 10.0 μm (e.g., 8.0 μm). The distance between the first cutout portions 501 b and 510 d, which are arranged across the slit portion 510 e from each other, is set to a length between 60.0 μm and 100.0 μm (e.g., 90.0 μm). Thus, the distance between these cutout portions is set to be equal to the integral multiple of the above slit-to-slit distance. The distance between adjacent cutout portions (e.g., the distance between the cutout portions 510 e and 510 d) is set to a length between 15.0 μm and 25.0 μm (e.g., 22.5 μm).

In the process of forming the peripheral wiring lines 51 (i.e., in the process of forming the second conductive layer), the slit portions 510 a and the like and the cutout portions 510 b and the like are formed by mask etching using a photolithographic method.

In the liquid crystal display device thus constructed, referring to FIG. 12, when a foreign substance 60 slips into a crossover section 40 at which a storage capacitor line 20 and a peripheral wiring line 51 intersect each other, for example, a fault such as a leak between the lines can be suitably fixed.

Specifically, a portion 51 a of the conductive layer (or the peripheral wiring line 51) connecting an end area 81 of the slit portion 510 a and the cutout portion 510 b is cut off by laser radiation, so that the end area 81 of the slit portion 510 a communicates with the cutout portion 510 b due to the laser-cut portion (or laser-irradiated portion designated by Symbol 62) as shown in FIG. 12. Similarly, a laser-cut portion (or laser-irradiated portion 62) is formed, so that a portion 51 b of the conductive layer connecting the cutout portion 510 h and the cutout portion 510 c is cut off. Further, a laser-cut portion (or laser-irradiated portion 63) is formed, so that a portion 51 e of the conductive layer connecting the cutout portion 510 c and the cutout portion 511 c is cut off. A laser-cut portion (or laser-irradiated portion 64) is formed, so that a portion 51 c of the conductive layer connecting the cutout portion 511 b and the cutout portion 511 c is cut off. A laser-cut portion (or laser-irradiated portion 64) is formed, so that a portion 51 d of the conductive layer connecting an end area 81 of the slit portion 511 a and the cutout portion 511 b is cut off. A laser-cut portion (or laser-irradiated portion 65) is formed, so that a portion 511 of the conductive layer connecting an end area 81 of the slit portion 511 a and an end area 81 of the slit portion 510 a is cut off. Consequently, the defective part attributable to the foreign substance 60 is electrically isolated, and thereby a failure caused by a fault such as a leak can be fixed.

According to the construction, the cutout portions 510 b and the like linearly aligned with the slit portions 510 a and the like are provided so that a defective area can be separated off. Thereby, a defect over a large area can be fixed, and therefore intrusion of a relatively-large foreign substance can be treated. Particularly compared to simply increasing the lengths of the slit portions 510 a and the like in order to enable repair of a larger defective area, increase of the resistance of the peripheral wiring lines 51 can be suppressed according to the present construction, which may prevent degradation of display performance.

Further, in the present embodiment, the slit portions 510 a and the like are arranged parallel to one another, while the cutout portions 510 b and the like are arranged to be aligned with the respective slit portions 510 a and the like. That is, the cutout portions 510 b and the like are arranged in an array of rows and columns.

Due to the parallel arrangement of the slit portions 510 a and the like and further due to the cutout portions 510 b and the like aligned with the parallel slit portions 510 a and the like, the above cutting operation can be advanced in the longitudinal direction of the slit portions 510 a and the like, or a direction (i.e., the array direction of the slit portions 510 a and the like) intersecting with the longitudinal direction. Thus, the cutting operation is facilitated. Specifically, during the laser cutting operation described above, the laser scanning can be advanced in either of the vertical and horizontal directions which intersect each other at an angle of 90 degrees. Thus, the laser scanning is facilitated, and consequently the precision of irradiation can be improved. Specifically, the portions of the peripheral wiring line 51 connecting the end areas 81 of the slit portions 510 a and the like and the cutout portions 510 b and the like can be cut off along the longitudinal direction of the silt portions 510 a and the like. The portions of the peripheral wiring line 51 connecting the end areas 81 of the parallel slit portions 510 a and the like, or the portions of the peripheral wiring line 51 connecting the cutout portions 510 b and the like arranged in a line can be cut off along the array direction of the slit portions 510 a and the like.

Each of the cutout portions 510 b and the like has a rectangular shape with 6.0 μm to 10.0 μm sides, or specifically, a square shape with 8.0 μm sides. Thereby, the precision of laser cutting can be improved. Consequently, a defective part can be cut off without leaving unfinished laser-cut portions.

In the case where isolation of a foreign substance spot is achieved by laser cutting during a repair process as in the manufacturing method of the present embodiment, the laser cutting can be advanced while involving 90-degree turns of the scanning laser (or scanning light), due to the rectangular (specifically, square in the present embodiment) cutout portions 510 b and the like, which are arranged in an array of rows and columns so as to be aligned with the respective slit portions 510 a and the like. That is, referring to FIG. 12, when each laser-cut portion 62, 63, 64 is formed by laser radiation so that a portion of the peripheral wiring line 51 connecting between the cutout portions 510 b and the like arranged in an array of rows and columns is cut off, the laser scanning direction can be set to either of the vertical and horizontal directions which intersect each other at right angles. Therefore, the laser cutting can be achieved by laser scanning that involves 90-degree turns. Further, a turning point at which the scanning laser turns in direction can be set to a point within any of the cutout portions 510 b and the like. Thereby, a cutoff defect at the turning point can be prevented. That is, the turning point can be set to a point within intangible portions of the peripheral wiring lines 51, and therefore the scanning laser can turn in direction while not cutting a wiring line portion. Consequently, a cutoff defect likely generated at the turning point can be prevented.

Shown above are embodiments of the present invention. However, the present invention is not limited to the embodiments explained in the above description made with reference to the drawings. The following embodiments may be included in the technical scope of the present invention, for example.

(1) In the above embodiments, the slit portions 210 a and the like, or the slit portions 510 a and the like and the cutout portions 510 b and the like are provided on the peripheral wiring lines 51, but rather may be provided on the storage capacitor lines 20.

(2) In the above embodiments, the slit portions 210 a and the like, or the slit portions 510 a and the like and the cutout portions 510 b and the like are provided in a crossover section at which a peripheral wiring line 51 and a storage capacitor line intersect each other. However, slit portions and cutout portions can be provided in a crossover section at which various other conductive layers intersect each other.

(3) In the above embodiments, a liquid crystal display device is shown for illustrative purposes. However, the construction according to the present invention can be employed on another type of display device such as an EL display device or a plasma display device.

(4) In the above embodiment, all the cutout portions are arranged evenly spaced apart. However, some of the cutout portions in the second or subsequent columns may be selectively eliminated, for example. Specifically, the arrangement may be formed as shown in FIG. 13, in which the cutout portions aligned with the first slit portion 510 a include cutout portions 510 b, 510 d in the first columns and cutout portions 510 c, 510 e in the second columns, while the cutout portions aligned with the second slit portion 511 a include cutout portions 511 h, 511 d in the first columns, but the cutout portions in the second columns are eliminated therefrom.

(5) In the above embodiment, two columns of cutout portions 510 b and the like are provided on each side of the slit portions 510 a and the like. However, any number of columns can be provided as long as the wiring resistance is within the permissible limits. For example, four columns may be provided on each side as shown in FIG. 14.

(6) In the above embodiment, the cutout portions 510 b, 510 d and the like are arranged on both sides of the slit 510 a. However, the cutout portions 510 b and the like may be arranged on one side of the slit 510 a as shown in FIG. 15, for example.

(7) In the above embodiments, the end areas 81 of the slit portions 210 a and the like, or the end areas 81 of the slit portions 510 a and the like and the cutout portions 510 b and the like are each formed into a rectangular shape. However, each of the end areas 83 of slit portions 710 a and the like, or cutout portions 710 b and the like may be formed into a circular shape as shown in FIG. 16, for example, as long as the opening size thereof is set to be sufficiently larger than the laser beam width. Further, any combination thereof may be possible.

(8) In the above embodiments, the slit 210 a is formed in a section at which a peripheral wiring line 21 and a storage capacitor line 20 intersect each other. However, a slit 210 a may be formed in a section (i.e., a crossover section 40) at which a data line 18 and a scanning line 19 intersect each other, as shown in FIG. 17, for example. In this case, when the data line 18 and the scanning line 19 are short-circuited due to intrusion of a foreign substance, the short circuit spot can be cut off (or isolated) by laser irradiation along dashed lines shown in FIG. 17. Alternatively, a slit 510 a and a cutout portion 510 b may be provided, as shown in FIG. 18. Also in this case, when the data line 18 and the scanning line 19 are short-circuited due to intrusion of a foreign substance, the short circuit spot can be cutoff (or isolated) by laser irradiation along dashed lines shown in FIG. 18. In FIGS. 17 and 18, Symbol 18 a designates a source electrode, while Symbol 41 designates a drain electrode. When a scan signal is supplied to a gate electrode (not shown) from the scanning line 19, the source electrode 18 a is conductively connected to the drain electrode 41 so that a data signal is supplied to the drain electrode 41 from the source electrode 18 a. The data signal is transmitted to the pixel electrode (not shown) via a contact 43. 

1. A display device comprising: a first conductive layer; and a second conductive layer arranged across an insulating layer from said first conductive layer, wherein: an overlap section at which said first conductive layer and said second conductive layer overlap each other is provided; at least one of said first conductive layer and said second conductive layer includes a slit portion that is arranged in said overlap section; and a width of said slit portion is set to be smaller at a medial area except both end areas of said slit portion, than at the both end areas.
 2. A display device as in claim 1, wherein said both end areas of said slit portion are formed to have a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm, and said medial area is formed to have a slit width between 4.0 μm and 6.0 μm.
 3. A display device as in claim 1, wherein said at least one of said first conductive layer and said second conductive layer, on which said slit portion is provided, includes a cutout portion located at a predetermined distance from said slit portion.
 4. A display device as in claim 3, wherein said slit portion includes a plurality of slit portions arranged parallel to one another, and said cutout portion includes cutout portions arranged to correspond to said respective slit portions.
 5. A display device as in claim 3, wherein said cutout portion is linearly aligned with said slit portion.
 6. A display device as in claim 3, wherein said cutout portion includes a plurality of cutout portions arranged along a longitudinal direction of said slit portion.
 7. A display device as in claim 3, wherein said cutout portion includes cutout portions arranged in an array of rows and columns.
 8. A display device as in claim 3, wherein said cutout portion is formed to have a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm.
 9. A manufacturing method of a display device that includes a first conductive layer and a second conductive layer arranged across an insulating layer from said first conductive layer, said manufacturing method comprising: forming said first conductive layer by a first conductive layer forming process; forming the insulting layer on said first conductive layer; forming the second conductive layer on said insulating layer by a second conductive layer forming process, so that an overlap section at which said second conductive layer overlaps with said first conductive layer is provided; and fixing a fault by a repair process, if the fault is generated in said overlap section, wherein: at least one of said first conductive layer forming process and said second conductive layer forming process includes forming a slit portion on at least one of said first conductive layer and said second conductive layer by a slit forming process, by which said slit portion is formed in said overlap section so as to have a smaller slit width at a medial area except both end areas of said slit portion, than at the both end areas; and said repair process includes cutting off an area of said fault by radiating a laser beam to a conductive layer portion adjacent to an end area of said slit portion provided as a relatively wide area thereof, starting at the end area.
 10. A manufacturing method of a display device, as in claim 9, wherein said both end areas are formed by said slit forming process into a rectangular shape on which each side thereof is set to a length equal to a value obtained by adding a value between 2.0 μm and 4.0 μm to a with of the laser beam.
 11. A manufacturing method of a display device, as in claim 9, wherein: said both end areas are formed by said slit forming process into a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm; and said medial area is formed by said slit forming process so as to have a slit width between 4.0 μm and 6.0 μm.
 12. A manufacturing method of a display device, wherein at least one of said first conductive layer forming process and said second conductive layer forming process includes forming a cutout portion located at a predetermined distance from said slit portion, by a cutout forming process.
 13. A manufacturing method of a display device, as in claim 12, wherein: said slit forming process includes forming a plurality of slit portions as said slit portion, which are arranged parallel to one another; and said cutout forming process includes forming cutout portions as said cutout portion, which are arranged to correspond to said plurality of slit portions.
 14. A manufacturing method of a display device, as in claim 12, wherein said cutout forming process includes forming a plurality of cutout portions as said cutout portion, which are arranged along a longitudinal direction of said slit portion.
 15. A manufacturing method of a display device, as in claim 12, wherein said cutout forming process includes forming cutout portions as said cutout portion, which are arranged in an array of rows and columns.
 16. A manufacturing method of a display device, as in claim 12, wherein said cutout portion is formed by said cutout forming process into a rectangular shape on which each side thereof is set to a length between 6.0 μm and 10.0 μm. 